Low pressure CVD of polycrystalline silicon

reaction kinetics and reactor modelling
  • 288 Pages
  • 1.43 MB
  • English
University of Eindhoven , Eindhoven
StatementW.L.M. Weerts.
The Physical Object
ID Numbers
Open LibraryOL19175669M

During the low pressure chemical vapour deposition (LPCVD) of polycrystalline silicon, the latter was subjected to a comprehensive kinetic by: 6.

High-Quality Doped Polycrystalline Silicon Using Low-Pressure Chemical Vapor Deposition (LPCVD) Article (PDF Available) in Energy Procedia September with 62 Reads. Polysilicon thin films are typically fabricated by low-pressure chemical vapor deposition (LPCVD) using thermal decomposition of silane (SiH 4).

The mechanical properties of polysilicon are strongly influenced by its microstructure, which is dependent on the deposition conditions.

Polysilicon thickness variation from 0 to Å had no adverse effect on the electrical characteristics or mechanical integrity of the devices.

In all cases, low values of N f (1 × 10 × 10 10 cm -2) and N it (10 10 cm eV -1) and high gate oxide dielectric strength (\sime 8 MV/cm) were obtained.

Modelling of a New Parallel-Flow CVD Reactor for Low Pressure Silicon Deposition Article (PDF Available) in Chemical Engineering Science 47() June with 51 Reads.

Low pressure chemical vapour deposition A m long fused quartz boat containing thirty-eight m diameter silicon wafers is mounted coaxially with the furnace axis.

Thirty single-side polished () p-type silicon wafers are positioned at equal distances of m in the wafer section, with the polished sides directed to the Cited by: 3.

The deposition of undoped polycrystalline and amorphous silicon in an ultra-low pressure chemical vapour deposition system capable of achieving operating pressure of Pa is discussed.

It is found that at deposition temperatures in the region of °C and reactor pressures of less than Pa very large grained polycrystalline silicon films are obtained, and in this regime the Cited by: 6.

Then, a low-stress silicon nitride material of ∼ μm thickness is deposited by low-pressure chemical vapor deposition Low pressure CVD of polycrystalline silicon book (Habermehl, ). These.

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A mathematical model has been developed for the fluid dynamics and the chemical reactions in silicon low pressure chemical vapor deposition (LPCVD) from silane in a cold-wall single-wafer reactor. Low-Stress Silicon Nitride LPCVD Low stress nitride is performed at a high ratio of DCS to NH3 flow rates (typically ~ 6).

The consequence of such silicon-enriched deposition is a very low tensile stress. The stress depends mainly on the gas mixing ratio and the process temperature. The processing pressure is typically a few Torr or lower. This reaction, based on the water-gas reaction, takes place in excess hydrogen, at an optimum temperature of °C and at a low pressure (ca.

1 Torr). Metallo-organic chemical vapor deposition (MOCVD) is also used to deposit alumina at lower temperatures. A common reaction is the pyrolysis of an aluminum alkoxide such as aluminum isopropoxide. The deposition of silicon carbide thin film on Si (1 0 0) wafer, using low pressure CVD of SiH2Cl2/C2H2/H2 reaction system, is investigated.

The SiC film. Polycrystalline silicon is widely used in integrated circuit processes as an MOS transistor gate and as an emitter contact. The material used in these applications is deposited by thermal chemical vapor deposition (CVD) from SiH4.

Typically, deposition is at low pressure (∼ torr.

Description Low pressure CVD of polycrystalline silicon FB2

In Fig. 7, there are two type of CVD method; hot-wall CVD is an example conventional CVD, low-pressure CVD (LPCVD) is suitable for application to small pieces placed in closely-placed wafer so a.

In the case of PE-CVD, a-Si films were degassed at °C in a nitrogen gas flow, which led to H concentration as small as a value that is almost undetectable by RS spectroscopy. Some other a-Si films were deposited by low-pressure thermal CVD Cited by: 1. Corpus ID: Low pressure CVD of polycrystalline silicon: reaction kinetics and reactor modelling @inproceedings{WeertsLowPC, title={Low pressure CVD of polycrystalline silicon: reaction kinetics and reactor modelling}, author={W.L.M.

Weerts}, year={} }. In the literature 21 it is also reported that, by depositing B‐doped Si films by low pressure (LP)CVD from SiH 4 and BCl 3, amorphous silicon is obtained for the lowest ratios of boron to silicon atoms in the gas phase, whereas poly‐Si films are produced for the intermediate values, changing to amorphous silicon again for the highest Cited by: 2.

Deposited Single Crystal Silicon (LPCVD) Low Pressure (LP) CVD Low Pressure Chemical Vapor Deoposition, LPCVD, is utilized in the deposition of many silicon based compounds at pressures ranging from about T to 10T and temperatures ranging from C.

way of grouping CVD reactors depends on the method used to heat the wafers. Another criterion is the pressure regime of operation (atmospheric-pressure versus reduced-pressure).

The reduced-pressure group can be further split into low-pressure CVD reactors in which the energy is entirely thermal as well as plasma-enhanced CVD reactors. Hot Wire CVD of Heterogeneous and Polycrystalline Silicon Semiconducting Thin Films for Application in Thin Film Transistors and Solar Cells configuration in poly-Si is still ambiguous.

The mi-croscopic structure of the grain boundaries is affected by the long-range. We have studied the low pressure chemical vapor deposition (LPCVD) process as applied to the preparation of in situ phosphorus‐doped polycrystalline silicon films.

Thickness profiling, electron microprobe, and mass spectrometry have been utilized in the characterization of this process.

COVID SNF labs are closed, but staff continue to support your research needs. Please stay in touch, take care and stay safe. Homoleptic Tin and Silicon Amido Compounds as Precursors for Low-Temperature Atmospheric Pressure Chemical Vapor Deposition of Tin and Silicon Oxide Thin Films.

Chemistry of Materials6 (4), DOI: /cma Bruce H. Weiller and Brenda V. by: Deposited Polysilicon using LPCVD. Polysilicon layers do not have a continuous structure (unlike single crystal continuous layers).

CVD Firstnano Low-Pressure Chemical Vapor Deposition System. The Firstnano Easy Tube LPCVD system has three tubes for the deposition of silicon nitride, polycrystalline silicon, and low temperature oxide (LTO). Wafers 6" and smaller can be accommodated. Currently only clean bare silicon or quartz wafers are allowed in the LPCVD.

A deposited silicon layer with a continuous single crystal lattice stucture. Ultrahigh vacuum CVD (UHVCVD) – CVD at very low pressure, typically below 10 −6 Pa (≈10 −8 torr).

Note that in other fields, a lower division between high and ultra-high vacuum is common, often 10 −7 Pa. Characterization of polycrystalline silicon carbide films grown by atmospheric pressure chemical vapor deposition on polycrystalline silicon - Volume 13 Issue 2 - Christian A.

Zorman, Shuvo Roy, Chien-Hung Wu, Aaron J. Fleischman, Mehran MehreganyCited by: The general technique of deposition is known as chemical vapor deposition (CVD). CVD is commonly used to deposit layers of polycrystalline silicon, silicon dioxide, and silicon nitride on the substrate.

CVD is accomplished by placing the substrate wafers in. Titanium nitride films deposited by low-pressure chemical vapor deposition (LPCVD) on Si() using TiCl{sub 4} and NH{sub 3} as reactants, were investigated as a function of deposition temperature between and {degrees}C.

LPCVD TiN depositions were carried out in a rapid thermal chemical vapor deposition system with a total deposition pressure of mTorr. The growth of polycrystalline silicon at temperatures below °C by the pyrolysis of silane at very low pressures (pressure. Two modes of growth were observed: columnar and twinned, below and above 10 mTorr, respectively.

The rate of growth for both types is only slightly dependent on the by: tion of silicon by APCVD () and by low pressure CVD (LPCVD) ().

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Some them were concerned with the epitaxy. Their results cannot be applied to the growth of polycrystalline silicon, because the crystallographic differ- ence influences the growth rates (15).

In other works, thin.Control of residual stress and strain gradient of polycrystalline SiC films deposited via low-pressure chemical vapor deposition on mm Si wafers is achieved by varying dichlorosilane (DCS) and 1,3-disilabutane (DSB) fractions in the inlet gas mixture.

For films deposited at °C and 45 sccm DSB, stress decreases from GPa tensile with no added DCS to MPa tensile with 40 sccm DCS.